Navitas Upgrades GaN IC Power by 50% for EV, Solar and Data Center
10 Maio 2022 - 9:30AM
Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in
gallium nitride (GaN) power integrated circuits has announced the
NV6169, a new high-power 650/800 V-rated GaNFast™ power IC with
GaNSense™ technology to address higher-power applications such as
400-1000 W 4K/8K TVs and displays, next-generation gaming systems,
500 W solar microinverters, 1.2 kW data-center SMPS, and up to 4 kW
/ 5 hp motor drives.
GaN is a next-generation power semiconductor technology running
20x faster than traditional silicon. Compared with traditional
silicon chargers, gallium nitride chargers can achieve 3x the power
or 3x faster charging with up to 40% energy savings in just half
the size and weight of legacy silicon solutions. GaNFast power ICs
with GaNSense technology integrates power, drive, control, with
additional autonomous-protection and loss-less current-sensing to
deliver the simplest, smallest, fastest and now even-higher-power
performance.
The 45 mOhms NV6169 features a 36% reduction in on-resistance
(RDS(ON)), delivering 50% more power than prior designs, in an
industry-standard, low-profile, low-inductance, 8 x 8 mm PQFN
package for high-efficiency, high-density power systems.
“Over 50,000,000 GaN power chips have been shipped to customers
including Samsung, Dell, Lenovo and Xiaomi with zero reported
GaN-related field failures, and GaNSense technology enables
real-time, accurate sensing of voltage, current and temperature to
further improve total system performance and robustness,” noted Dan
Kinzer, Navitas’ COO/CTO and co-founder. “Unprotected, so-called
‘discrete’ GaN or silicon chips can’t match Navitas’ performance
and reliability, and by offering the NV6169, we extend our reach
into higher-power applications such as data centers, solar and EV –
with an unprecedented 20-year limited warranty to accelerate GaN
adoption into these more-demanding systems.”
The NV6169 is the highest-power-rated IC from the most-advanced,
third-generation integrated GaN platform. GaNFast power ICs with
GaNSense technology feature GaN-industry-first features such as
loss-less current sensing and the world’s fastest short-circuit
protection, with a ‘detect-to-protect’ speed of only 30 ns, 6x
faster than discrete solutions. In motor-drive applications, GaN
ICs deliver up to 40% energy savings vs. silicon IGBTs, eliminate
30 external components, and increase system efficiency by 8%.
Unlike competing solutions, the NV6169 is rated at 650V for
nominal operation plus an 800 V peak-rating for robust operation
during transient events. As a truly-integrated power IC, the GaN
gate is fully-protected and the whole device rated at an
industry-leading electrostatic-discharge (ESD) specification of 2
kV.
The NV6169 is available immediately to customers under NDA. Mass
production lead times are currently 6 to 16 weeks. Simulation
models (PSPICE/LTSPICE/SiMetrix), 3D package model (STP) and
application note (AN-0016) are available to designers to optimize
next generation systems.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the industry leader in
GaN power ICs, founded in 2014. GaN power ICs integrate GaN power
with drive, control, protection and sensing to enable faster
charging, higher power density and greater energy savings for
mobile, consumer, enterprise, eMobility and new-energy markets.
Over 145 Navitas patents are issued or pending, and over 50 million
units have been shipped with zero reported GaN field failures.
Sustainability is a core focus, as every GaNFast power IC shipped
saves 4 kg of CO2 emissions. Navitas rang the Nasdaq opening bell
and started trading on Nasdaq on October 20th, 2021.
Navitas Semiconductor, GaNFast and the Navitas
logo are trademarks or registered trademarks of Navitas
Semiconductor Limited. All other brands, product names and marks
are or may be trademarks or registered trademarks used to identify
products or services of their respective owners.
Contact Information
Stephen OliverVP Corporate Marketing & Investor
RelationsNavitas Semiconductorir@navitassemi.com
A photo accompanying this announcement is available at
https://www.globenewswire.com/NewsRoom/AttachmentNg/386226a0-057f-4f10-8825-90c58a81ff58
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