Navitas To Reveal Major Breakthrough in Next-Gen Power Semiconductors at SEMICON Taiwan 2023
23 Agosto 2023 - 5:03PM
Navitas Semiconductor (Nasdaq: NVTS), announced that it will reveal
a new, high-performance wide bandgap power platform as part of its
display at one of Asia’s most prestigious electronics exhibitions –
sponsored by Navitas - SEMICON Taiwan 2023, from September 6th-8th.
Visitors will discover the latest gallium nitride (GaN) GaNFast™
power ICs integrate gallium nitride (GaN) power and drive,
with control, sensing, and protection to enable faster charging,
higher power density, and greater energy savings. Complementary
GeneSiC™ power devices are optimized high-power, high-voltage, and
high-reliability silicon carbide (SiC) solutions.
Additionally, Navitas will showcase cutting-edge, power-system
platforms to dramatically accelerate customer developments,
minimize time-to-market, and set new industry benchmarks in energy
efficiency, power density and system cost. These system platforms
include complete design collateral with fully-tested hardware,
embedded software, schematics, bill-of-materials, layout,
simulation and hardware test results. Examples include:
- Navitas’ CRPS185 data center power
platform, that delivers a full 3,200 W of power in only 1U (40 mm)
x 73.5mm x 185 mm (544 cc), achieving 5.9 W/cc, or almost 100 W/in3
power density. This is a 40% size reduction vs, the equivalent
legacy silicon approach and reaches over 96.5% efficiency at 30%
load, and over 96% stretching from 20% to 60% load, creating a
‘Titanium Plus’ benchmark.
- Navitas’ 6.6 kW 3-in-1
bi-directional EV on-board charger (OBC) with 3 kW DC-DC. This 96%+
efficient unit has over 50% higher power density, and with
efficiency over 95%, delivers up to 16% energy savings as compared
to competing solutions.
As part of SEMICON’s Power and Opto Semiconductor Forum,
Navitas’ Charles Bailley, Senior Director of Business Development,
will present “GaN Power ICs Increase Power Density in EV Power
Systems”. The presentation is at 2pm, on September 6th, in room
402, 4F, TaiNEX 1.
“Breakthrough high efficiency, high reliability, and high power
density – all from the new GaN power IC platform,” said Kevin 汪時民
Wang, Manager of Navitas Taiwan. "The new platform announcement
matches SEMICON’s theme of 'Innovating the World through
Semiconductors' and our own mission to 'Electrify Our World™’."
SEMICON Taiwan runs from September 6th –8th, 2023 at the Nangang
Exhibition Center, TaiNEX Hall 1 and 2 in Taipei, Taiwan. Arrange a
meeting with Navitas experts via sales@navitassemi.com or visit
Hall 1, booth J2238.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play,
next-generation power-semiconductor company, founded in 2014.
GaNFast™ power ICs integrate gallium nitride (GaN) power and drive,
with control, sensing, and protection to enable faster charging,
higher power density, and greater energy savings. Complementary
GeneSiC™ power devices are optimized high-power, high-voltage, and
high-reliability silicon carbide (SiC) solutions. Focus markets
include EV, solar, energy storage, home appliance / industrial,
data center, mobile and consumer. Over 185 Navitas patents are
issued or pending. Over 100 million GaN and 12 million SiC units
have been shipped, and with the industry’s first and only 20-year
GaNFast warranty. Navitas was the world’s first semiconductor
company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GeneSiC and the
Navitas logo are trademarks or registered trademarks of Navitas
Semiconductor Limited and affiliates. All other brands, product
names and marks are or may be trademarks or registered trademarks
used to identify products or services of their respective
owners.
Contact:
Stephen Oliver, VP Corporate Marketing & Investor Relations,
ir@navitassemi.com.
A photo accompanying this announcement is available at
https://www.globenewswire.com/NewsRoom/AttachmentNg/d9a64d14-7fa0-4ba4-94d2-b6350231e0dd
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