Navitas’ new ‘IntelliWeave’ Control Technique Powers Next-Gen AI Data Centers above 99% Efficiency
18 Outubro 2024 - 5:05PM
At this month’s IEEE Energy Conversion Congress and Expo (ECCE),
Navitas Semiconductor (Nasdaq: NVTS), the industry leader in
next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon
carbide (SiC) power semiconductors, will introduce conference
attendees to ‘IntelliWeave’ – an innovative patented new digital
control technique for improving next generation AI data center
power supply (PSU) efficiency.
In a world where ever-more energy is needed for the processing
of artificial intelligence (AI) and cloud-based applications,
minimizing power consumption has become a priority for data center
architects and operators. Combining next-generation GaN and SiC
semiconductors with new control technique strategies to power
conversion plays a key role in achieving this goal.
IntelliWeave’s novel digital control enables highest system
efficiencies with precision current sharing, ultra-fast dynamic
response and minimal phase error. A patented dual-loop and
dual-feed-forward interleaving control achieves absolute zero
voltage switching (ZVS) across the full-load range to enable
highest efficiencies. The digital control for Critical Conduction
Mode (CRM) interleaving Totem Pole Power Factor Control (PFC)
enables 30% reduction in power losses compared to existing
Continuous Conduction Mode (CCM) solutions. The digital control
combined with high-power GaNSafe power ICs has been proven on a 500
kHz GaN-based interleaving 3.2 kW CrM PFC PSU operating at 99.3%
peak efficiency including EMI filter loss.
Taking place in Phoenix, Arizona from October 20th to 24th, IEEE
ECCE 2024 features both industry-driven and application-oriented
technical sessions and brings together practicing engineers,
researchers and other professionals for interactive and
multidisciplinary discussions on the latest advances in various
areas related to energy conversion.
Tao Wei, Director, will present “Novel digital control for a
GaN-based CrM interleaved TP PFC,” on Monday October 21st at 5.30pm
in the main Expo Hall.
To find out more visit www.navitassemi.com
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play,
next-generation power-semiconductor company, celebrating 10
years of power innovation founded in 2014. GaNFast™ power
ICs integrate gallium nitride (GaN) power and drive, with
control, sensing, and protection to enable faster charging, higher
power density, and greater energy savings.
Complementary GeneSiC™ power devices are optimized
high-power, high-voltage, and high-reliability silicon carbide
(SiC) solutions. Focus markets include EV, solar, energy storage,
home appliance / industrial, data center, mobile, and consumer.
Over 250 Navitas patents are issued or pending. Navitas offers the
industry’s first and only 20-year GaNFast warranty and
was the world’s first semiconductor company to
be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GaNSafe, GeneSiC, and
the Navitas logo are trademarks or registered trademarks of Navitas
Semiconductor Limited and affiliates. All other brands, product
names, and marks are or may be trademarks or registered trademarks
used to identify products or services of their respective
owners.
Contact Information:
Llew Vaughan-Edmunds, Sr Director, Product Management &
Marketinginfo@navitassemi.com
Stephen Oliver, VP Investor Relationsir@navitassemi.com
A photo accompanying this announcement is available at
https://www.globenewswire.com/NewsRoom/AttachmentNg/760d01d3-fd69-40d5-9bae-c3ef2712c184
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