Analog Devices Silicon SPDT Switch Delivers Fast Settling Time for Demanding Test and Measurement Applications
20 Maio 2015 - 9:00AM
Business Wire
Analog Devices, Inc. (ADI) today introduced an absorptive
single-pole, double-throw (SPDT) switch specified for the 9-KHz to
13-GHz frequency band, with high isolation of 48 dB and low
insertion-loss of 0.6 dB at 8-GHz operation. The HMC1118LP3DE is
the first offering within ADI’s new RF and microwave control
product portfolio to exhibit the inherent advantages of silicon
process technology, which offers critical advantages over legacy
GaAs (gallium-arsenide) RF switches. These advantages include a
settling time that is one hundred times faster than GaAs, robust
ESD (electro-static discharge) protection (2000 V vs. 250 V
compared to GaAs), and the ability to extend the switch’s low
frequency-end one thousand times lower than GaAs while maintaining
high linearity.
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The HMC1118LP3DE also offers industry-leading RF power handling
of 4 W in through and 0.5 W in hot-switching operating modes.
Hot-switching power handling is more than two times better than
competitive parts with similar RF bandwidth, which allows engineers
to increase allowed RF power in their applications and systems
without the risk of damage to the part. The HMC1118LP3DE is
optimized for high-isolation and extremely flat transfer
characteristics within a wide operating frequency range up to 13
GHz, while maintaining high signal fidelity down to 9 kHz. The
combination of features suits the switch for demanding test and
measurement, automated test equipment, defense electronics, and
wireless communication applications as a lower cost alternative to
legacy GaAs switches.
- View product page and download data
sheet: http://www.analog.com/hmc1118
- Connect with engineers and ADI product
experts on EngineerZone®, an online technical support community:
https://ez.analog.com/community/hittite-microwave-and-analog-devices-support-collaboration-group
HMC1118LP3DE SPDT Switch Key Features
- Non-reflective 50-ohm design
- Positive control : 0/+3.3 V
- Low insertion loss: 0.68 dB at 8
GHz
- High isolation: 50 dB at 8 GHz
- Low-cut off frequency of 9 KHz
- Fast settling time of 7.5 usec for
0.05-dB of final RF output level
- Industry-leading high-power handling:
- 35.5-dBm through path
- 27-dBm terminated path and
hot-switching case
- High linearity:
- P1dB: +37 dBm typical
- IIP3: +61 dBm typical
- ESD rating: 2-KV HBM
Pricing and Availability
Product
Price Each per 1000
Packaging HMC1118LP3DE $6.18
3-mm × 3-mmQFN SMT
About Analog Devices
Analog Devices (NASDAQ: ADI) designs and manufactures
semiconductor products and solutions. We enable our customers to
interpret the world around us by intelligently bridging the
physical and digital with unmatched technologies that sense,
measure and connect. Visit http://www.analog.com.
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version on businesswire.com: http://www.businesswire.com/news/home/20150520005017/en/
Analog Devices, Inc.Beth Desjardins,
978-614-9599beth.desjardins@analog.comorPorter
NovelliAndrew MacLellan,
617-897-8270andrew.maclellan@porternovelli.com
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