Japan Grants Key Silicon Carbide Barrier Patent to Dow Corning
17 Abril 2006 - 7:23PM
PR Newswire (US)
Patent recognizes Dow Corning's significant contributions to
development of advanced ICs MIDLAND, Mich., April 17
/PRNewswire-FirstCall/ -- Dow Corning Corporation has been granted
a key patent in Japan covering the use of silicon carbide barrier
films between dielectric and metal layers found in the world's most
advanced semiconductor devices. Dow Corning pioneered the use of
silicon carbide barrier technology over 10 years ago, filing the
original invention with the United States Patent and Trademark
Office in February 1995. Silicon carbide barrier technology is
essential in the production of today's leading-edge devices, which
use copper dual damascene conductors and low-k dielectric
insulators. A silicon carbide barrier layer prevents copper
metallic species from diffusing into and contaminating neighboring
dielectric film layers in the chip interconnect structure. As a
result, chip manufacturers can continue building devices that are
smaller and faster than preceding generations. "The issuing of the
silicon carbide barrier layer patent in Japan is truly a momentous
occasion, providing formal recognition of Dow Corning's innovation
and continued contributions to the field of integrated circuit
science," said Phil Dembowski, global marketing manager for Dow
Corning's Device Fabrication Materials Business. "The patent also
provides some level of protection against others who wish to
practice or promote this technology without obtaining the
appropriate license to do so." Dow Corning has a long history of
innovation, and holds a number of other important patents for low-k
dielectrics, barrier films and silicon-based lithographic
materials, all of which enable the continued development of
advanced IC technology. "Dow Corning dedicates a significant
portion of resources to the discovery and development of new
materials and technology. It's part of our commitment to helping
advance the state-of-the-art in IC manufacturing," Dembowski said.
The new Japanese patent, number JP 3731932 B, is titled "Silicon
Carbide Metal Diffusion Barrier Layer." In the United States, its
sister patent (U.S.#5818071) has been formally cited 53 times in
support of other U.S. patents, an indicator of the technology's
significance. About Dow Corning Dow Corning Corporation
(http://www.dowcorning.com/electronics ) is a globally integrated
provider of materials, application technology and services, and is
focused on providing innovative technology for all segments of the
electronics industry. Dow Corning has development and applications
centers strategically located throughout Asia, Europe and the
United States. The centers offer advanced resources for electronics
materials and services, and are staffed with experienced
professionals who can provide technical support to customers
locally. Dow Corning Corporation is equally owned by The Dow
Chemical Company (NYSE:DOW) and Corning Incorporated (NYSE:GLW).
More than half of Dow Corning Corporation's sales are outside the
United States. DATASOURCE: Dow Corning Corporation CONTACT: Company
Contact: Don Piering of Dow Corning, +1-989-496-8972, ; or Agency
Contact: Bruce Hokanson of Loomis Group, +1-360-574-4000, Web site:
http://www.dowcorning.com/electronics
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